‘‘Universal’’ conduction-band structure in some common semiconductor compounds
نویسندگان
چکیده
منابع مشابه
Impurity band conduction in a high temperature ferromagnetic semiconductor.
The band structure of a prototypical dilute magnetic semiconductor (DMS), Ga1-xMnxAs, is studied across the phase diagram via infrared and optical spectroscopy. We prove that the Fermi energy (EF) resides in a Mn-induced impurity band (IB). Specifically the changes in the frequency dependent optical conductivity [sigma1(omega)] with carrier density are only consistent with EF lying in an IB. Fu...
متن کاملSize effects on the band-gap of semiconductor compounds
Based on a thermodynamic model for size-dependent melting temperature, the size-dependent band-gap of low dimensional semiconductor compounds is modeled without any adjustable parameter. The model predicts an increase of the band-gap of nanoparticles and nanowires for IIBVIB and IIIB-VB semiconductor compounds, with decreasing their size, which is supported by available experimental and other t...
متن کاملBand-Structure Effects in the Spin Relaxation of Conduction Electrons
Spin relaxation of conduction electrons in metals is significantly influenced by the Fermi surface topology. Electrons near Brillouin zone boundaries, special symmetry points, or accidental degeneracy lines have spin flip rates much higher than an average electron. A realistic calculation and analytical estimates show that these regions dominate the spin relaxation, explaining why polyvalent me...
متن کاملIntervalence-band THz laser in selectively-doped semiconductor structure
Monte Carlo simulation of carrier dynamics and far-infrared absorption in a selectively-doped p-type multilayer Ge structure with vertical transport was performed to test a novel terahertz laser concept. The design exploits the known mechanism of THz amplification on intersubband transitions in p-Ge, but with spatial separation of light hole accumulation regions from doped regions, which allows...
متن کاملAnisotropic Exchange Interaction of Localized Conduction-band Electrons in Semiconductor Structures
The spin-orbit interaction in semiconductors is shown to result in an anisotropic contribution into the exchange Hamiltonian of a pair of localized conduction-band electrons. The anisotropic exchange interaction exists in semiconductor structures which are not symmetric with respect to spatial inversion, for instance in bulk zinc-blend semiconductors. The interaction has both symmetric and anti...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 1990
ISSN: 0031-9007
DOI: 10.1103/physrevlett.65.752